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BC-13W High Power Bare Chip

Profile information
High power bare chip, output power from 12W to 15W, long lifetime, high efficiency, widely used in Industrial pump, Laser illumination, R&D and other fields.
basic information
Detailed parameters
编号:
重量:
0.00
Categories:
High Power Diode Laser Chip
应用领域
Products
976
关键指标
1
Wavelength
976nm
Power
13W
零售价:
0.00
市场价:
0.00
number:
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Specification
Bare Chip BC Item Number1 EB-BC-013-120-0976-03
Parameters Unit Min Typ Max
Optical2        
Center Wavelength nm 973 976 979
Wavelength Tolerance nm   ±3  
Output Power4 W   13  
Cavity Length mm   5  
Chip Width μm   400  
Spectral Width (FWHM) nm   3.5 4.5
Fast-axis Divergence Deg   29 34
Slow-axis Divergence Deg   6.5 9
Wavelength Temperature Coefficient nm/℃   0.28  
Emitter Width μm   122  
Thickness μm   145  
Electrical2
Power Conversion Efficiency % 55 60  
Slope Efficiency W/A 0.95 1.0  
Threshold Current A   0.8 1.05
Operating Current A   14 15
Operating Voltage V   1.5 1.7
Series Resistance   10  
Thermal
Operating Temperature3 15 25 35
Storage Temperature3   0~55  
Others
Working Mode -   CW  
Polarization % 90 97  
Notes
1. Explanation of Item Number: EB (Everbright In Short)- BC (Bare Chip)–013 (Output Power is 13W) -120(Emtter Width is 120μm)- 0976 (Center Wavelength is 976nm)- 03(Wavelength Tolerance is ±3nm)
2. Above Data Test at 25℃, Unless otherwise stated.
3. Please avoid operation and storage in the condensation enviroment. If exceed operating temperature, the device lifetime will be inpacted.
4. Lifetime reduced if exceed nominal output power. 
Version: XP03-1807B-R01

 

 

Specification

BC-13W High Power Bare Chip

Dimension
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