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BB-500Q 200 700 High Power Bare Bar

Profile information
High power bare bar, output power from 60W to 300W, long lifetime, high efficiency, widely used in Industrial pump, medical and R&D.
basic information
Detailed parameters
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重量:
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Categories:
High Power Diode Laser Chip
应用领域
Products
808,940
关键指标
1
Wavelength
808nm/940nm
Power
500QCW/200W/700W
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市场价:
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number:
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库存:
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Specification
Bare Bar BB Item Number1 EB-BB-###-###-####-##
Parameters Unit 500Q 808 200 940 700 940
Optical2        
Center Wavelength nm 808 940 940
Wavelength Tolerance nm ±3
Output Power5 W ≥500 ≥200 ≥700
Fast-axis Divergence4 Deg 65 55 55
Slow-axis Divergence Deg 8.5
Spectral Width (FWHM) nm ≤3.5 3 5
Polarization mode TM/TE TE
Wavelength Temperature Coefficient nm/℃ 0.28 0.3 0.3
Electrical2
Power Conversion Efficiency % ≥58 64 63
Slope Efficiency W/A 1.2 1.1 1.15
Threshold Current A 28 25 25
Operating Current A ≤430 ≤220 650
Operating Voltage V 2 1.5 1.7
Pulse Width us 200 200 500
Pulse frequency Hz 400 400 160
Pulse duty cycle % 8

Geometric Size

Number of Emitters # 34 24 34
Emitter Width μm 232 200 232
Emitter Pitch μm 290 400 290
Fill Factor % 80 50 80
Cavity Length mm 1.5 3 2
Bar Thickness μm 115
Bar Length mm 10.25
Thermal
Operating Temperature3 25 20 25
Storage Temperature3   -20~80  
Flow Velocity L/min 0.2 0.25 0.25
Notes
1. Explanation of Item Number: EB (Everbright In Short)- BB (Bare Bar)–### (Output Power is ###W) -###(Emtter number is ###)- #### (Center Wavelength is ####nm)- ##(Wavelength Tolerance is ±##nm)
2. Above Data Test at 25℃, Unless otherwise stated.
3. Please avoid operation and storage in the condensation enviroment. If exceed operating temperature, the device lifetime will be inpacted.
4. For fast-axis collimation, divergence ≤0.5°
5. Lifetime reduced if exceed nominal output power. 
Version: XP06-1807B-R01

 

 

Specification

BB-500QCW/200W/700W High Power Bare Bar

Dimension
Application

 

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